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A Product Line of Diodes Incorporated
ZXMP6A13F
60V P-CHANNEL ENHANCEMENT MODE MOSFET
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Product Summary
V(BR)DSS RDS(on) 400m @ VGS= -10V -60V 600m @ VGS= -4.5V 600m = -0.9A ID TA = 25C 400m = -1.1A
Features and Benefits
* * * * Fast switching speed Low input capacitance Low gate charge Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
* * * * * Case: SOT-23 Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Copper leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate)
Description and Applications
This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for high-efficiency power management applications. * * * * DC - DC converters Power management functions Relay and solenoid driving Motor control
SOT-23
S D G
Top View Top View Pin Out
D G
S
Equivalent Circuit
Ordering Information
Product
ZXMP6A13FTA
Marking 7P6
Reel size (inches) 7
Tape width (mm) 8
Quantity per reel 3000 Units
Marking Information
7P6
7P6 = Product Type Marking Code
ZXMP6A13F
Document Number DS32014 Rev. 4 - 2
1 of 8 www.diodes.com
November 2009
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXMP6A13F
Maximum Ratings @TA = 25C unless otherwise specified
Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS = 10V (Note 2) TA = 70C (Note 2) (Note 1) Symbol VDSS VGS ID IDM IS ISM Value -60 20 -1.1 -0.8 -0.9 -4.0 -1.2 -4.0 Units V V A A A A
Pulsed Drain Current (Note 3) Continuous Source Current (Body Diode) (Note 2) Pulsed Source Current (Body Diode) (Note 3)
Thermal Characteristics @TA = 25C unless otherwise specified
Characteristic Power Dissipation (Note 1) Linear Derating Factor Power Dissipation (Note 2) Linear Derating Factor Thermal Resistance, Junction to Ambient (Note 1) Thermal Resistance, Junction to Ambient (Note 2) Operating and Storage Temperature Range
Notes:
Symbol PD PD RJA RJA TJ, TSTG
Value 625 5 806 6.5 200 155 -55 to +150
Unit mW mW/C mW mW/C C/W C/W C
1. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions 2. For a device surface mounted on FR4 PCB measured at t 5 secs. 3. Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10s - pulse current limited by maximum junction temperature.
ZXMP6A13F
Document Number DS32014 Rev. 4 - 2
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(c) Diodes Incorporated
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ZXMP6A13F
Thermal Characteristics
10
0.7
Max Power Dissipation (W)
RDS(on)
-ID Drain Current (A)
Limited
0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 140 160
1
DC 1s 100ms 10ms Single Pulse Tamb=25C 1ms 100s
100m
10m
1
10
100
-VDS Drain-Source Voltage (V)
Temperature (C)
Safe Operating Area
Derating Curve
Thermal Resistance (C/W)
200 150
Maximum Power (W)
Tamb=25C
Single Pulse T amb=25C
10
D=0.5
100
Single Pulse
50 0 100
D=0.2 D=0.05 D=0.1
1 100 1m 10m 100m 1 10 100 1k
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ZXMP6A13F
Document Number DS32014 Rev. 4 - 2
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Electrical Characteristics
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage
@TA = 25C unless otherwise specified
Symbol Min Typ Max -0.5 100 0.400 0.600 -0.95 Unit Test Condition
BVDSS IDSS IGSS VGS(th) RDS (ON) gfs VSD trr Qrr Ciss Coss Crss tD(on) tr tD(off) tf Qg Qg Qgs Qgd
-60 -1.0

V A nA V S V ns nC
ID = -250A, VGS = 0V VDS = -60V, VGS = 0V VGS = 20V, VDS = 0V ID = -250A, VDS = VGS VGS = -10V, ID = -0.9A VGS = -4.5V, ID = -0.8A VDS = -15V, ID = -0.9A TJ = 25C, IS = -0.8A, VGS = 0V TJ = 25C, IF = -0.9A, di/dt = 100A/s
Static Drain-Source On-Resistance (Note 4) Forward Transconductance (Notes 4 and 6) Diode Forward Voltage (Note 4) Reverse Recovery Time (Note 6) Reverse Recovery Charge (Note 6) DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time (Note 5) Turn-On Rise Time (Note 5) Turn-Off Delay Time (Note 5) Turn-Off Fall Time (Note 5) Total Gate Charge (Note 5) Total Gate Charge (Note 5) Gate-Source Charge (Note 5) Gate-Drain Charge (Note 5)
Notes:
1.8 -0.85 21.1 19.3 219 25.7 20.5 1.6 2.2 11.2 5.7 2.9 5.9 0.74 1.5
pF
VDS = -30V, VGS = 0V f = 1.0MHz
ns
VDD = -30V, ID = -1A, RG 6.0, VGS = -10V VDS = -30V, VGS = -4.5V, ID = -0.9A VDS = -30V, VGS = -10V, ID = -0.9A
nC
nC
4. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 5. Switching characteristics are independent of operating junction temperature. 6. For design aid only, not subject to production testing.
ZXMP6A13F
Document Number DS32014 Rev. 4 - 2
4 of 8 www.diodes.com
November 2009
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXMP6A13F
Typical Characteristics
10
T = 25C
10V 3.5V 3V
-ID Drain Current (A)
-ID Drain Current (A)
4.5V
10
T = 150C
10V 5V
1
1
4.5V 3.5V 3V 2.5V 2V
2.5V 2V
0.1
1.5V -VGS
0.1
-VGS
0.01 0.1 1 10 0.1 1 10
-VDS Drain-Source Voltage (V)
-VDS Drain-Source Voltage (V)
Output Characteristics
Normalised RDS(on) and VGS(th)
1.8 1.6 1.4 1.2 1.0 0.8
Output Characteristics
-VDS = 10V
VGS = -10V ID = -0.9A RDS(on)
-ID Drain Current (A)
1
T = 150C
VGS = VDS ID = -250uA VGS(th)
0.1 1 2
T = 25C
3
4
5
0.6 -50
0
50
100
150
-VGS Gate-Source Voltage (V)
Tj Junction Temperature (C)
Typical Transfer Characteristics
RDS(on) Drain-Source On-Resistance ()
-VGS 2V 3V 3.5V 4V 5V T = 25C
Normalised Curves v Temperature
-ISD Reverse Drain Current (A)
10
T = 150C
1.5V
2.5V
1
T = 25C
1
7V 10V
0.1
0.1
1
10
0.01
0.4
0.6
0.8
1.0
1.2
1.4
-ID Drain Current (A)
-VSD Source-Drain Voltage (V)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
ZXMP6A13F
Document Number DS32014 Rev. 4 - 2
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ZXMP6A13F
Typical Characteristics - continued
10
C Capacitance (pF)
f = 1MHz CISS
-VGS Gate-Source Voltage (V)
300
VGS = 0V
8 6 4 2 0
VDS = -30V ID = -0.9A
200
100
CRSS
COSS
0 0.1
1
10
0
1
2
3
4
5
6
-VDS - Drain - Source Voltage (V)
Q - Charge (nC)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
Test Circuits
Current regulator
12V 0.2 F 50k Same as D.U.T
QG
VG
QGS
QGD VDS IG D.U.T ID VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS 90% VGS RG 10% VGS tr t(on) td(of ) tr t(on) td(on) Pulse width 1 S Duty factor 0.1% RD VDS VDD
Switching time waveforms
Switching time test circuit
ZXMP6A13F
Document Number DS32014 Rev. 4 - 2
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ZXMP6A13F
Package Outline Dimensions
E
e b 3 leads e1
L1
E1
D
A A1 L c
SOT23
Dim. Millimeters Min. A A1 b c D e 0.01 0.30 0.085 2.80 Max. 1.12 0.10 0.50 0.20 3.04 Inches Min. 0.0004 0.012 0.003 0.110 Max. 0.044 0.004 0.020 0.008 0.120 e1 E E1 L L1 Dim. Millimeters Min. Max. Inches Min. Max.
1.90 NOM 2.10 1.20 0.25 0.45 2.64 1.40 0.60 0.62 -
0.075 NOM 0.083 0.047 0.0098 0.018 0.104 0.055 0.0236 0.024 -
0.95 NOM
0.037 NOM
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Suggested Pad Layout
0.95 0.037
2.0 0.079 0.9 0.035 0.8 0.031
mm inches
ZXMP6A13F
Document Number DS32014 Rev. 4 - 2
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November 2009
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXMP6A13F
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2009, Diodes Incorporated
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ZXMP6A13F
Document Number DS32014 Rev. 4 - 2
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November 2009
(c) Diodes Incorporated

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